GaN (on Si)-Based High Voltage and High Switching Frequency Lateral Power Semiconductor Device
Sri. K. Bose1, S. K. Mazumder1, and
M. Chukhman2
1. Laboratory for Energy and Switching-Electronics System, Department of Electrical and Computer Engineering, University of Illinois at Chicago, 851 South Morgan Street, Science and Engineering Office, Chicago
2. Department of Bioengineering, University of Illinois at Chicago, 851 South Morgan Street, Chicago
2. Department of Bioengineering, University of Illinois at Chicago, 851 South Morgan Street, Chicago
Abstract—In the present work, a theoretical physics-based simulation study is carried out to know the breakdown strength and switching parameters of a GaN(on Si)-based optically triggered (latch free) lateral power semiconductor device. It is observed from the simulation study that the device can block up to 1500 V with the current handling capacity of 15 A. The device has turn-on and turn-off delays of 20 ns and 170 ns respectively, when triggered by an UV light source of 350 nm wavelength.
Index Terms— GaN, high voltage power electronics, lateral device structure, optical triggering, Si
Cite: Sri. K. Bose, S. K. Mazumder, and M. Chukhman, "GaN (on Si)-Based High Voltage and High Switching Frequency Lateral Power Semiconductor Device," Lecture Notes on Photonics and Optoelectronics, Vol.1, No.1, pp.26-29, June 2013. doi: 10.12720/lnpo.1.1.26-29
Index Terms— GaN, high voltage power electronics, lateral device structure, optical triggering, Si
Cite: Sri. K. Bose, S. K. Mazumder, and M. Chukhman, "GaN (on Si)-Based High Voltage and High Switching Frequency Lateral Power Semiconductor Device," Lecture Notes on Photonics and Optoelectronics, Vol.1, No.1, pp.26-29, June 2013. doi: 10.12720/lnpo.1.1.26-29
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