GaN -based High Voltage and High Switching Frequency Darlington Power Transistor
Sri. K. Bose1, S. K. Mazumder1,
and
M. Chukhman2
1. University of Illinois at Chicago, 851 South Morgan Street, Science and Engineering Office, Chicago, USA
2. Department of Bioengineering, University of Illinois at Chicago, 851 South Morgan Street, Chicago, USA
2. Department of Bioengineering, University of Illinois at Chicago, 851 South Morgan Street, Chicago, USA
Abstract—In the present work, a theoretical physics-based simulation study is carried out to know the breakdown strength and current handling capacity of a GaN-based optically triggered (UV light source of 350 nm wavelength) Darlington power transistor. It is observed from the simulation study that the device can block more than 5000 V with the current handling capacity of 12 A.
Index Terms—Darlington transistor, GaN, high voltage power electronics, optical triggering
Cite: Sri. K. Bose, S. K. Mazumder, and M. Chukhman, "GaN -based High Voltage and High Switching Frequency Darlington Power Transistor," Lecture Notes on Photonics and Optoelectronics, Vol.1, No.1, pp.23-25, June 2013. doi: 10.12720/lnpo.1.1.23-25
Index Terms—Darlington transistor, GaN, high voltage power electronics, optical triggering
Cite: Sri. K. Bose, S. K. Mazumder, and M. Chukhman, "GaN -based High Voltage and High Switching Frequency Darlington Power Transistor," Lecture Notes on Photonics and Optoelectronics, Vol.1, No.1, pp.23-25, June 2013. doi: 10.12720/lnpo.1.1.23-25
You need to log in to download the PDF file
Array