Transmitted Powers of Waves through Superconductor-dielectric Photonic Crystal
Muin F. Ubeid1, Mohammed M. Shabat1,
and
Mohammed O. Sid-Ahmed2
1. Department of Physics, Faculty of Science, Islamic University of Gaza, P.O.Box 108, Gaza, Gaza Strip, Palestinian Authority
2. Department of Physics, Faculty of Science, Sudan University of Science and Technology, The Republic of The Sudan
2. Department of Physics, Faculty of Science, Sudan University of Science and Technology, The Republic of The Sudan
Abstract—We Consider a periodic superconductor-dielectric photonic crystal situated between two half free spaces. A polarized plane wave is obliquely incident on it. The reflection and transmission of electromagnetic waves by the crystal are analyzed theoretically and numerically with the emphasis on the penetration depth of the superconductor. Maxwell's equations are used to determine the electric and magnetic fields of the incident waves at each layer. Snell's law is applied and the boundary conditions are imposed at each layer interface to calculate the reflected and transmitted coefficients of the structure. The reflected and transmitted powers of the crystal are determined using these coefficients by a recursive method. In the numerical results, the mentioned powers are computed and illustrated as versus the wavelength, angle of incidence and dielectric thickness.
Index Terms—Electromagnetic waves, penetration depth, photonic crystal, reflection, transmission, superconductor
Cite: Muin F. Ubeid, Mohammed M. Shabat, and Mohammed O. Sid-Ahmed, "Transmitted Powers of Waves through Superconductor-dielectric Photonic Crystal," Lecture Notes on Photonics and Optoelectronics , Vol.1, No.1, pp.35-39, June 2013. doi: 10.12720/lnpo.1.1.35-39
Index Terms—Electromagnetic waves, penetration depth, photonic crystal, reflection, transmission, superconductor
Cite: Muin F. Ubeid, Mohammed M. Shabat, and Mohammed O. Sid-Ahmed, "Transmitted Powers of Waves through Superconductor-dielectric Photonic Crystal," Lecture Notes on Photonics and Optoelectronics , Vol.1, No.1, pp.35-39, June 2013. doi: 10.12720/lnpo.1.1.35-39
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